Temperature-induced local and average structural changes in BaTiO3-xBi(Zn 1/2Ti1/2)O3 solid solutions: The origin of high temperature dielectric permittivity

Hou, Dong; Usher, Tedi -Marie; Zhou, Hanhan; Raengthon, Natthaphon; Triamnak, Narit; Cann, David P.; Forrester, Jennifer S.; Jones, Jacob L.

doi:10.1063/1.4989393

Title: Temperature-induced local and average structural changes in BaTiO₃-xBi(Zn _1/2Ti_1/2)O₃ solid solutions: The origin of high temperature dielectric permittivity

Journal Article · Fri Aug 11 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4989393· OSTI ID:1376492

^[1];

^[2]; Zhou, Hanhan ^[1]; Raengthon, Natthaphon ^[3]; Triamnak, Narit ^[4];

^[5];

^[6]; Jones, Jacob L. ^[1]

North Carolina State Univ., Raleigh, NC (United States)
North Carolina State Univ., Raleigh, NC (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oregon State Univ., Corvallis, OR (United States); Chulalongkorn Univ., Bangkok (Thailand)
Oregon State Univ., Corvallis, OR (United States); Silpakorn Univ., Nakornpathom (Thailand)
Oregon State Univ., Corvallis, OR (United States)
Univ. of Leeds, Leeds (United Kingdom)

The existence of local tetragonal distortions is evidenced in the BaTiO_3–xBi(Zn_1/2Ti_1/2)O₃ (BT–xBZT) relaxor dielectric material system at elevated temperatures. The local and average structures of BT-xBZT with different compositions are characterized using in situ high temperature total scattering techniques. Using the box-car fitting method, it is inferred that there are tetragonal polar clusters embedded in a non-polar pseudocubic matrix for BT-xBZT relaxors. The diameter of these polar clusters is estimated as 2–3 nm at room temperature. Sequential temperature series fitting shows the persistence of the tetragonal distortion on the local scale, while the average structure transforms to a pseudocubic paraelectric phase at high temperatures. The fundamental origin of the temperature stable permittivity of BT-xBZT and the relationship with the unique local scale structures are discussed. This systematic structural study of the BT-xBZT system provides both insight into the nature of lead-free perovskite relaxors, and advances the development of a wide range of electronics with reliable high temperature performance.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357

OSTI ID:: 1376492

Alternate ID(s):: OSTI ID: 1374784

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 6; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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Title: Temperature-induced local and average structural changes in BaTiO₃-xBi(Zn _1/2Ti_1/2)O₃ solid solutions: The origin of high temperature dielectric permittivity