Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T. -M.; Wang, G. -C.

doi:10.1016/j.apsusc.2017.03.260

Title: Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Journal Article · Fri Mar 31 00:00:00 EDT 2017 · Applied Surface Science

DOI:https://doi.org/10.1016/j.apsusc.2017.03.260· OSTI ID:1376144

Yang, Y. -B. ^[1]; Seewald, L. ^[1]; Mohanty, Dibyajyoti ^[2]; Wang, Y. ^[3]; Zhang, L. H. ^[4]; Kisslinger, K. ^[4]; Xie, Weiyu ^[1]; Shi, J. ^[3]; Bhat, I. ^[2]; Zhang, Shengbai ^[1]; Lu, T. -M. ^[1]; Wang, G. -C. ^[1]

Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems
Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Electrical, Computer and Systems Engineering
Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Materials Science and Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [$$\overline{1}2\overline{1}$$]_CdTe//[$$\overline{1}100$$]_CdS//[010]_mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1376144

Alternate ID(s):: OSTI ID: 1419405

Report Number(s):: BNL-114085-2017-JA; R&D Project: 16060; 16060; KC0403020

Journal Information:: Applied Surface Science, Vol. 413, Issue C; ISSN 0169-4332

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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Title: Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

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