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Title: High work-function hole transport layers by self-assembly using a fluorinated additive

Journal Article · · Journal of Materials Chemistry C
DOI:https://doi.org/10.1039/C3TC30973H· OSTI ID:1376021
 [1];  [1];  [2];  [1];  [3];  [4];  [4];  [1]
  1. Univ. of California, Davis, CA (United States). Dept. of Chemical Engineering and Materials Science
  2. Duzce Univ. (Turkey). Dept. of Physics
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Univ. of California, Davis, CA (United States). Dept. of Chemistry

The hole transport polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) derives many of its favorable properties from a PSS-rich interfacial layer that forms spontaneously during coating. Since PEDOT:PSS is only usable as a blend it is not possible to study PEDOT:PSS without this interfacial layer. Through the use of the self-doped polymer sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET) and a polyfluorinated ionomer (PFI) it is possible to compare transparent conducting organic films with and without interfacial layers and to understand their function. Using neutron reflectometry, we show that PFI preferentially segregates at the top surface of the film during coating and forms a thermally stable surface layer. Because of this distribution we find that even small amounts of PFI increase the electron work function of the HTL. We also find that annealing at 150°C and above reduces the work function compared to samples heated at lower temperatures. Using near edge x-ray absorption fine structure spectroscopy and gas chromatography we show that this reduction in work function is due to S-P3MEET being doped by PFI. Organic photovoltaic devices with S-P3MEET/PFI hole transport layers yield higher power conversion efficiency than devices with pure S-P3MEET or PEDOT:PSS hole transport layers. Additionally, devices with a doped interface layer of S-P3MEET/PFI show superior performance to those with un-doped S-P3MEET.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC52-07NA27344; AC52-06NA25396; FG36-08GO18018
OSTI ID:
1376021
Report Number(s):
LLNL-JRNL-637759; JMCCCX
Journal Information:
Journal of Materials Chemistry C, Vol. 2, Issue 1; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

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Cited By (3)

Perfluorinated Ionomer-Modified Hole-Injection Layers: Ultrahigh-Workfunction but Nonohmic Contacts journal August 2015
Conductive triethylene glycol monomethyl ether substituted polythiophenes with high stability in the doped state
  • Dissanayake, Dushanthi S.; Gunathilake, Samodha S.; Udamulle Gedara, Chinthaka M.
  • Journal of Polymer Science Part A: Polymer Chemistry, Vol. 57, Issue 10 https://doi.org/10.1002/pola.29362
journal March 2019
Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer journal January 2018

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