In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

Chen, Renjie; Nguyen, Binh-Minh; Tang, Wei; Liu, Yang; Yoo, Jinkyoung; Dayeh, Shadi A.

doi:10.1063/1.4983835

Title: In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

Journal Article · Mon May 22 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4983835· OSTI ID:1375878

^[1]; Nguyen, Binh-Minh ^[2]; Tang, Wei ^[3]; Liu, Yang ^[4];

^[5];

^[6]

Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies and HRL Laboratories
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies; Univ. of California, Los Angeles, CA (United States). Materials Science and Engineering
Sandia National Lab. (SNL-CA), Livermore, CA (United States). Center for Integrated Nanotechnologies; North Carolina State Univ., Raleigh, NC (United States). Materials Science and Engineering Program
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program, Dept. of NanoEngineering

The metal-semiconductor interface in self-aligned contact formation can determine the overall performance of nanoscale devices. This interfacial morphology is predicted and well researched in homogenous semiconductor nanowires (NWs) but was not pursued in heterostructured core/shell nanowires. Here, we found here that the solid-state reactions between Ni and Ge/Si core/shell nanowires resulted in a protruded and a leading NiSiy segment into the channel. A single Ni₂Ge/NiSi_y to Ge/Si core/shell interface was achieved by the selective shell removal near the Ni source/drain contact areas. In using in situ transmission electron microscopy, we measured the growth rate and anisotropic strain evolution in ultra-short channels. We also found elevated compressive strains near the interface between the compound contact and the NW and relatively lower strains near the center of the channel which increased exponentially below the 10 nm channel length to exceed 10% strain at ~3 nm lengths. These compressive strains are expected to result in a non-homogeneous energy band structure in Ge/Si core/shell NWs below 10 nm and potentially benefit their transistor performance.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC52-06NA25396; AC04-94AL85000

OSTI ID:: 1375878

Report Number(s):: LA-UR-17-22748; APPLAB

Journal Information:: Applied Physics Letters, Vol. 110, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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