skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se2 solar cells

Journal Article · · Progress in Photovoltaics
DOI:https://doi.org/10.1002/pip.2883· OSTI ID:1375623
ORCiD logo [1];  [2]; ORCiD logo [2];  [3];  [3]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States)

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 °C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Ga + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. In conclusion, changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1375623
Alternate ID(s):
OSTI ID: 1374459
Report Number(s):
NREL/JA-5K00-68439
Journal Information:
Progress in Photovoltaics, Vol. 25, Issue 9; ISSN 1062-7995
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 29 works
Citation information provided by
Web of Science

References (27)

3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography journal January 2016
Compositional investigation of potassium doped Cu(In,Ga)Se 2 solar cells with efficiencies up to 20.8% : Compositional investigation of potassium doped Cu(In,Ga)Se journal February 2014
Characterization of Grain Boundaries in Cu(In,Ga)Se$_{\bf 2}$ Films Using Atom-Probe Tomography journal October 2011
Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells
  • Ramanathan, Kannan; Contreras, Miguel A.; Perkins, Craig L.
  • Progress in Photovoltaics: Research and Applications, Vol. 11, Issue 4 https://doi.org/10.1002/pip.494
journal January 2003
Wide bandgap Cu(In,Ga)Se 2 solar cells with improved energy conversion efficiency : Wide bandgap Cu(In,Ga)Se
  • Contreras, Miguel A.; Mansfield, Lorelle M.; Egaas, Brian
  • Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 7 https://doi.org/10.1002/pip.2244
journal June 2012
Compositional gradients and impurity distributions in CuInSe 2 thin-film solar cells studied by atom probe tomography : CuInSe journal April 2012
Cross-correlative TEM and atom probe analysis of partial crystallisation in NiNbSn metallic glasses journal June 2008
Modeling the optical constants of Cu2In4Se7 and CuGa3Se5 crystals journal January 2007
The electronic structure of chalcopyrites-bands, point defects and grain boundaries
  • Siebentritt, Susanne; Igalson, Malgorzata; Persson, Clas
  • Progress in Photovoltaics: Research and Applications, Vol. 18, Issue 6 https://doi.org/10.1002/pip.936
journal August 2010
Na distribution in Cu(In,Ga)Se2 thin films: Investigation by atom probe tomography journal July 2015
Investigation of the effect of potassium on Cu(In,Ga)Se 2 layers and solar cells journal May 2015
Structural analysis and optical and electrical characterization of the ordered defect compound CuIn 5 Se 8 journal July 2003
Cu(In,Ga)Se$_{\bf 2}$ Thin-Film Solar Cells and Modules—A Boost in Efficiency Due to Potassium journal March 2015
Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells journal November 2013
Features of KF and NaF Postdeposition Treatments of Cu(In,Ga)Se 2 Absorbers for High Efficiency Thin Film Solar Cells journal August 2015
Defect physics of the CuInSe 2 chalcopyrite semiconductor journal April 1998
Optical functions and electronic structure of CuInSe 2 , CuGaSe 2 , CuInS 2 , and CuGaS 2 journal January 2001
Band offsets and optical bowings of chalcopyrites and Zn‐based II‐VI alloys journal September 1995
In situ site-specific specimen preparation for atom probe tomography journal February 2007
Ordered vacancy compound CuIn 3 Se 5 on GaAs (100): Epitaxial growth and characterization journal June 1994
Preparation and characterization of Cu(In 1− x Ga x ) 3 Se 5 thin films journal August 1995
Targeting Grain Boundaries for Structural and Chemical Analysis Using Correlative EBSD, TEM and APT journal August 2015
Excitonic luminescence of Cu(In,Ga)Se2 journal June 2005
Interfacial Alkali Diffusion Control in Chalcopyrite Thin-Film Solar Cells journal July 2014
Alkali segregation and matrix concentrations in thin film Cu(In,Ga)Se2 at targeted interfaces characterized in 3-D at the nanoscale
  • Stokes, Adam; Al-Jassim, Mowafak; Diercks, Dave
  • 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC), 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2015.7356017
conference June 2015
Defect chalcopyrite Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/ materials and high Ga-content Cu(In,Ga)Se/sub 2/-based solar cells conference January 1996
Hardware and Techniques for Cross- Correlative TEM and Atom Probe Analysis journal July 2008

Cited By (5)

Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells journal August 2017
Deep surface Cu depletion induced by K in high-efficiency Cu(In,Ga)Se 2 solar cell absorbers
  • Donzel-Gargand, Olivier; Thersleff, Thomas; Keller, Jan
  • Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 9 https://doi.org/10.1002/pip.3010
journal March 2018
Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope journal August 2019
Revealing the beneficial role of K in grain interiors, grain boundaries, and at the buffer interface for highly efficient CuInSe 2 solar cells
  • Muzzillo, Christopher P.; Poplawsky, Jonathan D.; Tong, Ho Ming
  • Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 10 https://doi.org/10.1002/pip.3022
journal June 2018
Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy journal March 2018