Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

Harrington, S. D.; Sharan, A.; Rice, A. D.; Logan, J. A.; McFadden, A. P.; Pendharkar, M.; Pennachio, D. J.; Wilson, N. S.; Gui, Z.; Janotti, A.; Palmstrom, C. J.

doi:10.1063/1.4985200

Title: Valence-band offsets of CoTiSb/In_0.53Ga_0.47As and CoTiSb/In_0.52Al_0.48As heterojunctions

Journal Article · Fri Aug 11 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4985200· OSTI ID:1375020

^[1]; Sharan, A. ^[2];

^[1];

^[1]; McFadden, A. P. ^[1];

^[1]; Pennachio, D. J. ^[1]; Wilson, N. S. ^[1]; Gui, Z. ^[2]; Janotti, A. ^[2]; Palmstrom, C. J. ^[1]

Univ. of California, Santa Barbara, CA (United States)
Univ. of Delaware, Newark, DE (United States)

The valence-band offsets, ΔE_v, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In_0.53Ga_0.47As and In_0.52Al_0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In_0.53Ga_0.47As and CoTiSb/In_0.52Al_0.48As, respectively. By combining these measurements with previously reported XPS ΔE_v (In_0.53Ga_0.47As/In_0.52Al_0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In_0.53Ga_0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In_0.53Ga_0.47As and In_0.52Al_0.48As. As a result, good agreement is found between the calculated valence-band offsets and those determined from XPS.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0014388; ACI-1053575

OSTI ID:: 1375020

Alternate ID(s):: OSTI ID: 1374777

Journal Information:: Applied Physics Letters, Vol. 111, Issue 6; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Title: Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

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Title: Valence-band offsets of CoTiSb/In_0.53Ga_0.47As and CoTiSb/In_0.52Al_0.48As heterojunctions