Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B
Abstract
Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.
- Authors:
-
- Colorado School of Mines, Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Texas State Univ., San Marcos, TX (United States)
- EAG Lab., Sunnyvale, CA (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Foundational Program to Advance Cell Efficiency (F-PACE II); USDOE
- OSTI Identifier:
- 1374257
- Alternate Identifier(s):
- OSTI ID: 1371509
- Report Number(s):
- NREL/JA-5K00-69005
Journal ID: ISSN 2166-2746
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
- Additional Journal Information:
- Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIP
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; epitaxy; thin film deposition; metalloids; materials treatment
Citation Formats
Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., and Gorman, Brian P. Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B. United States: N. p., 2017.
Web. doi:10.1116/1.4994553.
Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., & Gorman, Brian P. Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B. United States. https://doi.org/10.1116/1.4994553
Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., and Gorman, Brian P. 2017.
"Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B". United States. https://doi.org/10.1116/1.4994553. https://www.osti.gov/servlets/purl/1374257.
@article{osti_1374257,
title = {Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B},
author = {Burton, George L. and Diercks, David R. and Perkins, Craig L. and Barnes, Teresa M. and Ogedengbe, Olanrewaju S. and Jayathilaka, Pathiraja A. and Edirisooriya, Madhavie and Wang, Alice and Myers, Thomas H. and Gorman, Brian P.},
abstractNote = {Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.},
doi = {10.1116/1.4994553},
url = {https://www.osti.gov/biblio/1374257},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
issn = {2166-2746},
number = 4,
volume = 35,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2017},
month = {Sat Jul 01 00:00:00 EDT 2017}
}
Web of Science