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Title: The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4984320· OSTI ID:1371645

CdTe devices have reached efficiencies of 22% due to continuing improvements in bulk material properties, including minority carrier lifetime. Device modeling has helped to guide these device improvements by quantifying the impacts of material properties and different device designs on device performance. One of the barriers to truly predictive device modeling is the interdependence of these material properties. For example, interfaces become more critical as bulk properties, particularly, hole density and carrier lifetime, increase. We present device-modeling analyses that describe the effects of recombination at the interfaces and grain boundaries as lifetime and doping of the CdTe layer change. The doping and lifetime should be priorities for maximizing open-circuit voltage (Voc) and efficiency improvements. However, interface and grain boundary recombination become bottlenecks for device performance at increased lifetime and doping levels. In conclusion, this work quantifies and discusses these emerging challenges for next-generation CdTe device efficiency.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1371645
Alternate ID(s):
OSTI ID: 1366558
Report Number(s):
NREL/JA-5K00-67610; JAPIAU
Journal Information:
Journal of Applied Physics, Vol. 121, Issue 21; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 152 works
Citation information provided by
Web of Science

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Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures journal December 2019
Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells journal August 2019
Point defect engineering in thin-film solar cells journal June 2018
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping journal September 2018
Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior journal December 2017
Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques journal January 2018
High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal May 2018
Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells journal September 2018
Thin‐film solar cells exceeding 22% solar cell efficiency: An overview on CdTe-, Cu(In,Ga)Se 2 -, and perovskite-based materials journal December 2018
Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study journal February 2019
Enhanced ductility of III-V covalent semiconductors from electrons and holes journal November 2019
Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe journal January 2018
An investigation of the stirring duration effect on synthesized graphene oxide for dye-sensitized solar cells journal February 2020
Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures journal January 2020
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