Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Zhang, Qian; Chere, Eyob Kebede; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Ni, Yizhou; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng

doi:10.1002/aenm.201401977

Title: Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Journal Article · Wed Jan 07 00:00:00 EST 2015 · Advanced Energy Materials

DOI:https://doi.org/10.1002/aenm.201401977· OSTI ID:1371030

Zhang, Qian ^[1]; Chere, Eyob Kebede ^[1]; McEnaney, Kenneth ^[2]; Yao, Mengliang ^[3]; Cao, Feng ^[1]; Ni, Yizhou ^[1]; Chen, Shuo ^[1]; Opeil, Cyril ^[3]; Chen, Gang ^[2]; Ren, Zhifeng ^[1]

Univ. of Houston, Houston, TX (United States). Dept. of Physics and TcSUH
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
Boston College, Chestnut Hill, MA (United States). Dept. of Physics

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm² V^-1s^-1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10¹⁸-10¹⁹ cm^-3. Even though the highest room temperature power factor ≈3.3 × 10^-3 W m^-1 K^-2 is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb_0.9925Cr_0.0075Se and ≈673 K for Pb_0.995Cr_0.005Se. Finally, the calculated device efficiency of Pb_0.995Cr_0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001299; FG02-09ER46577

OSTI ID:: 1371030

Journal Information:: Advanced Energy Materials, Vol. 5, Issue 8; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; ISSN 1614-6832

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 86 works

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Title: Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

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