An ab initio study of multiple phonon scattering resonances in silicon germanium alloys
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
- Rutgers Univ., Piscataway, NJ (United States). Dept. of Mechanical and Aerospace Engineering. Inst. for Advanced Materials, Devices and Nanotechnology
We have computed here phonon scattering rates and density of states in silicon germanium alloys using Green's function calculations and density functional theory. This method contrasts with the virtual crystal approximation (VCA) used in conjunction with Fermi's golden rule, which cannot capture resonance states occurring through the interaction of substitutional impurities with the host lattice. These resonances are demonstrated by density of states and scattering rate calculations in the dilute limit and show broadening as the concentration increases. Although these deviations become significant from the VCA at high frequencies, the relaxation times obtained for these phonon modes are small in both the full scattering theory and the VCA, resulting in their negligible contribution to thermal transport.
- Research Organization:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001299; FG02-09ER46577
- OSTI ID:
- 1370991
- Alternate ID(s):
- OSTI ID: 1228335
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 17; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
First-principles calculations of thermal, electrical, and thermoelectric transport properties of semiconductors
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journal | March 2016 |
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