Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

Smakman, E. P.; DeJarld, M.; Luengo-Kovac, M.; Martin, A. J.; Sih, V.; Koenraad, P. M.; Millunchick, J.

doi:10.1063/1.4895783

Title: Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

Journal Article · Thu Sep 11 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4895783· OSTI ID:1370081

Smakman, E. P. ^[1]; DeJarld, M. ^[2]; Luengo-Kovac, M. ^[2]; Martin, A. J. ^[2]; Sih, V. ^[2]; Koenraad, P. M. ^[1]; Millunchick, J. ^[2]

Eindhoven Univ. of Technology (Netherlands)
Univ. of Michigan, Ann Arbor, MI (United States)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0000957

OSTI ID:: 1370081

Journal Information:: APL Materials, Vol. 2, Issue 9; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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References (22)

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