Formation and coarsening of near-surface Ga nanoparticles on SiNx

Canniff, J. C.; Jeon, S.; Huang, S.; Goldman, R. S.

doi:10.1063/1.4922454

Title: Formation and coarsening of near-surface Ga nanoparticles on SiN_x

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922454· OSTI ID:1370079

Canniff, J. C. ^[1]; Jeon, S. ^[1]; Huang, S. ^[1];

^[1]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering

Here, we have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiN_x using Ga⁺ focused-ion-beam-irradiation of SiN_x, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ~4 × 10¹² cm^-2. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0000957

OSTI ID:: 1370079

Alternate ID(s):: OSTI ID: 1226759

Journal Information:: Applied Physics Letters, Vol. 106, Issue 24; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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