Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.
Conference
·
OSTI ID:1369519
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1369519
- Report Number(s):
- SAND2016-6423C; 643970
- Resource Relation:
- Conference: Proposed for presentation at the 18th International Conference on Metal Organic Vapor Phase Epitaxy held July 10-15, 2016 in San Diego, CA.
- Country of Publication:
- United States
- Language:
- English
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