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Title: Electron-ion coupling in semiconductors beyond Fermi's Golden Rule [On the electron-ion coupling in semiconductors beyond Fermi's Golden Rule]

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4]
  1. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Czech Academy of Sciences, Prague 8 (Czech Republic)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  3. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  4. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Polish Academy of Sciences, Krakow (Poland)

In the present study, a theoretical study of electron-phonon (electron-ion) coupling rates in semiconductors driven out of equilibrium is performed. Transient change of optical coefficients reflects the band gap shrinkage in covalently bonded materials, and thus, the heating of atomic lattice. Utilizing this dependence, we test various models of electron-ion coupling. The simulation technique is based on tight-binding molecular dynamics. Our simulations with the dedicated hybrid approach (XTANT) indicate that the widely used Fermi's golden rule can break down describing material excitation on femtosecond time scales. In contrast, dynamical coupling proposed in this work yields a reasonably good agreement of simulation results with available experimental data.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-76SF00515; LG15013; LM2015083
OSTI ID:
1368585
Journal Information:
Physical Review B, Vol. 95, Issue 1; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 30 works
Citation information provided by
Web of Science

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  • Gorbunov, S. A.; Medvedev, N. A.; Terekhin, P. N.
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Cited By (14)

Superionic State in Alumina Produced by Nonthermal Melting journal January 2020
Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision journal November 2019
Thermal and nonthermal melting of III-V compound semiconductors journal April 2019
Influence of model parameters on a simulation of x-ray irradiated materials: example of XTANT code conference May 2017
Modeling of XUV-induced damage in Ru films: the role of model parameters journal January 2018
Multistep transition of diamond to warm dense matter state revealed by femtosecond X-ray diffraction text January 2018
Various damage mechanisms in carbon and silicon materials under femtosecond X-ray irradiation text January 2018
Multistep transition of diamond to warm dense matter state revealed by femtosecond X-ray diffraction journal March 2018
Influence of model parameters on a simulation of x-ray irradiated materials: example of XTANT code text January 2017
Contrasting behavior of covalent and molecular carbon allotropes exposed to extreme ultraviolet and soft x-ray free-electron laser radiation text January 2017
Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision text January 2019
Various damage mechanisms in carbon and silicon materials under femtosecond X-ray irradiation journal January 2018
Modeling of XUV-induced damage in Ru films: the role of model parameters text January 2018
Multistep transition of diamond to warm dense matter state revealed by femtosecond X-ray diffraction text January 2017

Figures / Tables (7)