Migration Processes of the As Interstitial in GaAs and InGaAs.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1367779
- Report Number(s):
- SAND2016-6164C
642852
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the The 28th Annual Workshop on Recent Developments in Electronic Structure Methods held June 26-29, 2016 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wright, Alan F., Modine, Normand A., Lee, Stephen R., and Foiles, Stephen Martin. Migration Processes of the As Interstitial in GaAs and InGaAs.. United States: N. p., 2016.
Web.
Wright, Alan F., Modine, Normand A., Lee, Stephen R., & Foiles, Stephen Martin. Migration Processes of the As Interstitial in GaAs and InGaAs.. United States.
Wright, Alan F., Modine, Normand A., Lee, Stephen R., and Foiles, Stephen Martin. 2016.
"Migration Processes of the As Interstitial in GaAs and InGaAs.". United States. https://www.osti.gov/servlets/purl/1367779.
@article{osti_1367779,
title = {Migration Processes of the As Interstitial in GaAs and InGaAs.},
author = {Wright, Alan F. and Modine, Normand A. and Lee, Stephen R. and Foiles, Stephen Martin},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1367779},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}
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