Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

Johns, Paul M.; Baciak, James E.; Nino, Juan C.

doi:10.1063/1.4962293

Title: Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

Journal Article · Fri Sep 02 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4962293· OSTI ID:1366970

^[1]; Baciak, James E. ^[1]; Nino, Juan C. ^[1]

Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

In some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI₃, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. Here, we show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI₃ bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. Our work demonstrates that BiI₃ can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE

Grant/Contract Number:: NA0002534; NE0000730

OSTI ID:: 1366970

Alternate ID(s):: OSTI ID: 1315848

Journal Information:: Applied Physics Letters, Vol. 109, Issue 9; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Cited By (4)

Dopant compensation in alloyed CH3NH3PbBr3−xClx perovskite single crystals for gamma-ray spectroscopy Wei, Haotong; DeSantis, Dylan; Wei, Wei Nature Materials, Vol. 16, Issue 8 https://doi.org/10.1038/nmat4927	journal	July 2017
The electronic structure and band interface of cesium bismuth iodide on a titania heterostructure using hard X-ray spectroscopy Phuyal, Dibya; Jain, Sagar M.; Philippe, Bertrand Journal of Materials Chemistry A, Vol. 6, Issue 20 https://doi.org/10.1039/c8ta00947c	journal	January 2018
Room temperature semiconductor detectors for nuclear security Johns, Paul M.; Nino, Juan C. Journal of Applied Physics, Vol. 126, Issue 4 https://doi.org/10.1063/1.5091805	journal	July 2019
Dopant compensation in alloyed CH3NH3PbBr3-xClx perovskite single crystals for gamma-ray spectroscopy T. J., Savenije,; J., Huang,; D., Guo, The University of North Carolina at Chapel Hill University Libraries https://doi.org/10.17615/gjzh-1440	text	January 2017

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