Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
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January 1992 |
The temperature dependence of ion-beam-induced amorphization in β-SiC
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December 1995 |
Nanoscale engineering of radiation tolerant silicon carbide
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January 2012 |
Ionization-induced annealing of pre-existing defects in silicon carbide
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August 2015 |
A Rutherford backscattering study of Ar- and Xe-implanted silicon carbide
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March 1992 |
Effect of collision cascade density on radiation damage in SiC
- Azarov, A. Yu.; Titov, A. I.; Karaseov, P. A.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 8-9
https://doi.org/10.1016/j.nimb.2009.01.025
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May 2009 |
Ion-beam-produced structural defects in ZnO
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March 2003 |
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
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October 2015 |
Handbook of SiC properties for fuel performance modeling
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September 2007 |
Some new aspects for the evaluation of disorder profiles in silicon by backscattering
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January 1973 |
Energy spike effects in ion-bombarded GaN
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April 2009 |
A method for the solution of certain non-linear problems in least squares
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January 1944 |
Atomic scale simulation of defect production in irradiated 3C-SiC
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September 2001 |
Radiation-induced amorphization and swelling in ceramics
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March 1991 |
Low-temperature damage formation in ion-implanted SiC and its correlation with primary energy deposition
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July 2014 |
Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes
- Titov, A. I.; Karaseov, P. A.; Azarov, A. Yu.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 16
https://doi.org/10.1016/j.nimb.2009.05.033
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August 2009 |
Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
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April 2016 |
Effect of the density of collision cascades on ion implantation damage in ZnO
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October 2007 |
Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
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March 2013 |
Structure and properties of ion-beam-modified (6H) silicon carbide
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September 1998 |
Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
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August 1996 |
SRIM – The stopping and range of ions in matter (2010)
- Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
https://doi.org/10.1016/j.nimb.2010.02.091
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June 2010 |
Mechanism for the molecular effect in Si bombarded with clusters of light atoms
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February 2006 |
Amorphization and recrystallization of covalent tetrahedral networks
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January 1999 |
Materials modification with ion beams
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May 1986 |
Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
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September 1996 |
High density cascade effects
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January 1981 |
Effect of the density of collision cascades on implantation damage in GaN
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April 2001 |
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
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December 2014 |
On the structure of irradiation-induced collision cascades in metals as a function of recoil energy and crystal structure
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February 1993 |
Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
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August 2016 |
Time constant of defect relaxation in ion-irradiated 3C-SiC
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May 2015 |
Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
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September 2015 |
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
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May 2003 |
Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
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August 2012 |