Electronic and magnetic properties of epitaxial SrRhO3 films

Nichols, John A.; Yuk, Simuck F.; Sohn, Changhee; Jeen, Hyoungjeen; Freeland, John W.; Cooper, Valentino R.; Lee, Ho Nyung

doi:10.1103/PhysRevB.95.245121

Title: Electronic and magnetic properties of epitaxial $SrRh O_{3}$ films

Journal Article · Fri Jun 16 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.245121· OSTI ID:1364313

Nichols, John A. ^[1]; Yuk, Simuck F. ^[1]; Sohn, Changhee ^[1]; Jeen, Hyoungjeen ^[2]; Freeland, John W. ^[3]; Cooper, Valentino R. ^[1]; Lee, Ho Nyung ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Pusan National Univ., Busan (Korea, Republic of). Dept. of Physics
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

The strong interplay of fundamental order parameters in complex oxides is known to give rise to exotic physical phenomena. The 4$$d$$ transition-metal oxide SrRh O₃ has generated much interest, but advances have been hindered by difficulties in preparing single-crystalline phases. Here we epitaxially stabilize high-quality single-crystalline SrRh O₃ films and investigate their structural, electronic, and magnetic properties. Lastly, we determine that their properties significantly differ from the paramagnetic metallic ground state that governs bulk samples and are strongly related to rotations of Rh O₆ octahedra.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357; AC02-05CH11231

OSTI ID:: 1364313

Alternate ID(s):: OSTI ID: 1364189

Journal Information:: Physical Review B, Vol. 95, Issue 24; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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