Reentrant resistive behavior and dimensional crossover in disordered superconducting TiN films
- A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk (Russia); Novosibirsk State Univ., Novosibirsk (Russia)
- North China Univ. of Technology, Beijing (China)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk (Russia); Novosibirsk State Univ., Novosibirsk (Russia); Univ. Autonoma de Madrid, Madrid (Spain)
A reentrant temperature dependence of the normal state resistance often referred to as the N-shaped temperature dependence, is omnipresent in disordered superconductors – ranging from high-temperature cuprates to ultrathin superconducting films – that experience superconductor-to-insulator transition. Yet, despite the ubiquity of this phenomenon its origin still remains a subject of debate. Here we investigate strongly disordered superconducting TiN films and demonstrate universality of the reentrant behavior. We offer a quantitative description of the N-shaped resistance curve. We show that upon cooling down the resistance first decreases linearly with temperature and then passes through the minimum that marks the 3D-2D crossover in the system. In the 2D temperature range the resistance first grows with decreasing temperature due to quantum contributions and eventually drops to zero as the system falls into a superconducting state. As a result, our findings demonstrate the prime importance of disorder in dimensional crossover effects.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- Russian Foundation for Basic Research; Ministry of Education and Science of the Russian Federation; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Materials Sciences and Engineering Division
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1364138
- Journal Information:
- Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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