Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.; Chrysler, M.; Kumah, D.; Walker, F. J.; Ahn, C. H.; Droubay, T.; Du, Y.; Chambers, S. A.; Bowden, M.; Shen, X.; Su, D.

doi:10.1557/jmr.2016.496

Title: Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

Journal Article · Thu Jan 12 00:00:00 EST 2017 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2016.496· OSTI ID:1358030

Ngai, J. H. ^[1]; Ahmadi-Majlan, K. ^[1]; Moghadam, J. ^[1]; Chrysler, M. ^[1]; Kumah, D. ^[2]; Walker, F. J. ^[2]; Ahn, C. H. ^[2]; Droubay, T. ^[3]; Du, Y. ^[3]; Chambers, S. A. ^[3]; Bowden, M. ^[4]; Shen, X. ^[5]; Su, D. ^[5]

Univ. of Texas, Arlington, TX (United States). Dept. of Physics
Yale Univ., New Haven, CT (United States). Dept. of Applied Physics. Center for Research on Interface Structures and Phenomena
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Division
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Enviromental Molecular Sciences Lab.
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. In this paper, we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba_1-xSr_xTiO₃/Ge and SrZr_xTi_1-xO₃/Ge, will be discussed. In the case of Ba_1-xSr_xTiO₃/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZr_xTi_1-xO₃/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Finally, analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Univ. of Texas, Arlington, TX (United States); Yale Univ., New Haven, CT (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER); National Science Foundation (NSF)

Grant/Contract Number:: AC02-98CH10886; DMR-1508530; DMR-1309868

OSTI ID:: 1358030

Report Number(s):: BNL-113868-2017-JA; R&D Project: 16060; 16060; KC0403020

Journal Information:: Journal of Materials Research, Vol. 32, Issue 2; ISSN 0884-2914

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui arXiv https://doi.org/10.48550/arxiv.1806.11140	text	January 2018
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Polarization-controlled modulation doping of a ferroelectric from first principles Liu, Xiaohui; Tsymbal, Evgeny Y.; Rabe, Karin M. Physical Review B, Vol. 97, Issue 9 https://doi.org/10.1103/physrevb.97.094107	journal	March 2018
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Interfacial structure of SrZr _x Ti ₁₋ _x O ₃ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui Applied Physics Letters, Vol. 113, Issue 20 https://doi.org/10.1063/1.5046394	journal	November 2018
Polarization-controlled modulation doping of a ferroelectric from first principles Liu, Xiaohui; Tsymbal, Evgeny Y.; Rabe, Karin M. arXiv https://doi.org/10.48550/arxiv.1710.03854	text	January 2017

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