Influence of SiC grain boundary character on fission product transport in irradiated TRISO fuel
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
The relationship between grain boundary character and fission product migration is identified as an important knowledge gap in order to advance the understanding of fission product release from TRISO fuel particles. Precession electron diffraction (PED), a TEM-based technique, was used in this study to quickly and efficiently provide the crystallographic information needed to identify grain boundary misorientation, grain boundary type (low or high angle) and whether the boundary is coincident site lattice (CSL) – related, in irradiated SiC. Analysis of PED data showed the grain structure of the SiC layer in an irradiated TRISO fuel particle from the AGR-1 experiment to be composed mainly of twin boundaries with a small fraction of low angle grain boundaries (<10%). In general, fission products favor precipitation on random, high angle grain boundaries but can precipitate out on low angle and CSL-related grain boundaries to a limited degree. Pd is capable of precipitating out on all types of grain boundaries but most prominently on random, high angle grain boundaries. Pd-U and Pd-Ag precipitates were found on CSL-related as well as random high angle grain boundaries but not on low angle grain boundaries. In contrast, precipitates containing only Ag were found only on random, high angle grain boundaries but not on either low angle or CSL-related grain boundaries.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE)
- Grant/Contract Number:
- AC07-05ID14517
- OSTI ID:
- 1357491
- Alternate ID(s):
- OSTI ID: 1345242
- Report Number(s):
- INL/JOU-15-36834; PII: S0022311516300381
- Journal Information:
- Journal of Nuclear Materials, Vol. 473, Issue C; ISSN 0022-3115
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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