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Title: Mesoporous nanocrystalline film architecture for capacitive storage devices

Patent ·
OSTI ID:1357480

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

Research Organization:
Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0001342
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Patent Number(s):
9,653,219
Application Number:
14/173,490
OSTI ID:
1357480
Resource Relation:
Patent File Date: 2014 Feb 05
Country of Publication:
United States
Language:
English

References (10)

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Mesoporous nanocrystalline film architecture for capacitive storage devices patent March 2014
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Highly Organized Mesoporous TiO2 Films with Controlled Crystallinity: A Li-Insertion Study journal January 2007
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Photocapacitance of Nanocrystalline Oxide Semiconductor Films:  Band-Edge Movement in Mesoporous TiO2 Electrodes during UV Illumination journal May 1996