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Title: BaSn 2 : A wide-gap strong topological insulator

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [3]
  1. United States Naval Research Lab., Washington, DC (United States). Center for Computational Materials Science
  2. Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
  3. Binghamton Univ., NY (United States). Dept. of Physics, Applied Physics and Astronomy
  4. Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy

BaSn2 has been shown to form as layers of buckled stanene intercalated by barium ions. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn2 has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here in this paper, we present a detailed investigation of BaSn2, using both ab initio and experimental methods. First-principles calculations demonstrate that this overlooked material is indeed a strong, wide-gap topological insulator with a bulk band gap of 200 meV. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through ab initio modeling and synthesis experiments, we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals.

Research Organization:
Ames Lab., Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Council; National Science Foundation (NSF); Gordon and Betty Moore Foundation
Grant/Contract Number:
DMR-1410514; AC02-07CH11358; GBMF4411
OSTI ID:
1355405
Alternate ID(s):
OSTI ID: 1344010
Report Number(s):
IS-J-9259; PRBMDO; TRN: US1702603
Journal Information:
Physical Review B, Vol. 95, Issue 8; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

References (67)

Generalized Gradient Approximation Made Simple journal October 1996
A search model for topological insulators with high-throughput robustness descriptors journal May 2012
Projector augmented-wave method journal December 1994
Stability and Surface Reconstruction of Topological Insulator Bi 2 Se 3 on Exposure to Atmosphere journal August 2014
Quantum Spin Hall Insulator State in HgTe Quantum Wells journal November 2007
wannier90: A tool for obtaining maximally-localised Wannier functions journal May 2008
Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures journal September 2015
Pressure-Driven Evolution of the Covalent Network in CaB 6 journal August 2012
Colloquium : Topological band theory journal June 2016
Optimizing Bi 2 x Sb x Te 3 y Se y solid solutions to approach the intrinsic topological insulator regime journal October 2011
Topological nodal-line semimetals in alkaline-earth stannides, germanides, and silicides journal May 2016
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 journal June 2009
Spintronics and spincaloritronics in topological insulators journal January 2014
Topological Crystalline Insulators journal March 2011
Atomic and electronic structure of bismuth-bilayer-terminated Bi 2 Se 3 (0001) prepared by atomic hydrogen etching journal May 2015
Tuning MgB 2 (0001) surface states through surface termination journal September 2011
A topological Dirac insulator in a quantum spin Hall phase journal April 2008
PHON: A program to calculate phonons using the small displacement method journal December 2009
Synthesis of a predicted layered LiB via cold compression journal October 2015
Experimental Verification of PbBi 2 Te 4 as a 3D Topological Insulator journal May 2012
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal June 2006
Opportunities in chemistry and materials science for topological insulators and their nanostructures journal October 2011
Role of surface termination in realizing well-isolated topological surface states within the bulk band gap in TlBiSe 2 and TlBiTe 2 journal February 2016
Nonlinear Optical Probe of Tunable Surface Electrons on a Topological Insulator journal February 2011
Ab initiomolecular dynamics for liquid metals journal January 1993
Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3 journal February 2014
Dirac Line Nodes in Inversion-Symmetric Crystals journal July 2015
Stacked topological insulator built from bismuth-based graphene sheet analogues journal March 2013
Epitaxial growth of two-dimensional stanene journal August 2015
A tunable topological insulator in the spin helical Dirac transport regime journal July 2009
Topological insulators, topological superconductors and Weyl fermion semimetals: discoveries, perspectives and outlooks journal September 2015
Gapless MoS 2 allotrope possessing both massless Dirac and heavy fermions journal May 2014
Single crystal growth from light, volatile and reactive materials using lithium and calcium flux journal April 2014
Surface Termination of Cleaved Bi 2 Se 3 Investigated by Low Energy Ion Scattering journal April 2013
Spin texture on the Fermi surface of tensile-strained HgTe journal January 2013
Type-II Weyl semimetals journal November 2015
Z2 Topological Order and the Quantum Spin Hall Effect journal September 2005
Surface Hall Effect and Nonlocal Transport in SmB6: Evidence for Surface Conduction journal November 2013
New Superconducting and Semiconducting Fe-B Compounds Predicted with an Ab Initio Evolutionary Search journal November 2010
Quantum Spin Hall Effect in Graphene journal November 2005
Colloquium: Topological insulators journal November 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
VESTA : a three-dimensional visualization system for electronic and structural analysis journal May 2008
Discovery of a Three-Dimensional Topological Dirac Semimetal, Na3Bi journal January 2014
Experimental Realization of a Three-Dimensional Topological Insulator Phase in Ternary Chalcogenide TlBiSe 2 journal September 2010
Weyl Semimetal in a Topological Insulator Multilayer journal September 2011
Experimental realization of a topological crystalline insulator in SnTe journal September 2012
Topological Insulator Materials journal October 2013
Topological Insulators in Three Dimensions journal March 2007
Dirac Semimetals in Two Dimensions journal September 2015
Large-Gap Quantum Spin Hall Insulators in Tin Films journal September 2013
Crystal structure of barium distannide, BaSn2 journal January 2008
Ground State of the Electron Gas by a Stochastic Method journal August 1980
Theory of topological Kondo insulators journal January 2012
Screened hybrid density functionals for solid-state chemistry and physics journal January 2009
Molecular Doping Control at a Topological Insulator Surface: F 4 -TCNQ on Bi 2 Se 3 journal June 2014
Experimental Realization of a Three-Dimensional Dirac Semimetal journal July 2014
Self-interaction correction to density-functional approximations for many-electron systems journal May 1981
Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators journal September 2011
Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment journal February 2012
Large-gap quantum spin Hall states in decorated stanene grown on a substrate journal August 2015
Single-Dirac-Cone Topological Surface States in the TlBiSe 2 Class of Topological Semiconductors journal July 2010
Fermi level tuning and a large activation gap achieved in the topological insulator Bi 2 Te 2 Se by Sn doping journal April 2012
A stable three-dimensional topological Dirac semimetal Cd3As2 journal May 2014
Ab initio engineering of materials with stacked hexagonal tin frameworks journal July 2016
Topological materials journal August 2012
Bulk Dirac Points in Distorted Spinels journal January 2014

Cited By (3)

First‐Principles Prediction of a New Family of Layered Topological Insulators journal August 2019
Functionalization of group-14 two-dimensional materials journal May 2018
First-principles prediction of a new family of layered topological insulators text January 2019

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