Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses
- Univ. of Alberta, Edmonton, AB (Canada). Dept. of Electrical and Computer Engineering
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Alberta, Edmonton, AB (Canada)
Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, we also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.
- Research Organization:
- Univ. of Alberta, Edmonton, AB (Canada); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE; Natural Sciences and Engineering Research Council of Canada (NSERC)
- Grant/Contract Number:
- AC02-76SF00515
- OSTI ID:
- 1353179
- Journal Information:
- Journal of Lightwave Technology, Vol. 35, Issue 4; ISSN 0733-8724
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices
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journal | January 2018 |
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