Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds]

Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan; Li, Leigang; Zhang, Wenrui; Narayan, Jagdish; Wang, Haiyan; Jia, Quanxi

doi:10.1557/jmr.2016.391

Title: Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds]

Journal Article · Thu Nov 10 00:00:00 EST 2016 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2016.391· OSTI ID:1351193

^[1]; Zhou, Honghui ^[2];

^[3]; Li, Leigang ^[4]; Zhang, Wenrui ^[4]; Narayan, Jagdish ^[2]; Wang, Haiyan ^[5]; Jia, Quanxi ^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
North Carolina State Univ., Raleigh, NC (United States)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Texas A & M Univ., College Station, TX (United States)
Texas A & M Univ., College Station, TX (United States); Purdue Univ., West Lafayette, IN (United States)

Growth of unexpected phases from a composite target of BiFeO₃:BiMnO₃ and/or BiFeO₃:BiCrO₃ has been explored using pulsed laser deposition. The Bi₂FeMnO₆ tetragonal phase can be grown directly on SrTiO₃ (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO₃ (LAO) substrates with narrow growth windows. However, introducing a thin CeO₂ buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO₃:BiCrO₃ target. Pure X2 phase can be obtained on CeO₂-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO₃ (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO₂ can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1351193

Report Number(s):: LA-UR-16-23633; applab; TRN: US1701267

Journal Information:: Journal of Materials Research, Vol. 31, Issue 22; ISSN 0884-2914

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Title: Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds]

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