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Title: Adiabatic perturbation theory of electronic stopping in insulators

Journal Article · · Physical Review B
 [1];  [1];  [1];  [2]
  1. Imperial College, London (United Kingdom)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
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A model able to explain the complicated structure of electronic stopping at low velocities in insulating materials is presented. It is shown to be in good agreement with results obtained from time-dependent density-functional theory for the stopping of a channeling Si atom in a Si crystal. If we define the repeat frequency f=v/λ, where λ is the periodic repeat length of the crystal along the direction the channeling atom is traveling, and v is the velocity of the channeling atom, we find that electrons experience a perturbing force that varies in time at integer multiples l of f. This enables electronic excitations at low atom velocity, but their contributions diminish rapidly with increasing values of l. The expressions for stopping power are derived using adiabatic perturbation theory for many-electron systems, and they are then specialized to the case of independent electrons. Lastly, a simple model for the nonadiabatic matrix elements is described, along with the procedure for determining its parameters.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-07NA27344
OSTI ID:
1351139
Alternate ID(s):
OSTI ID: 1255349
Report Number(s):
LLNL-JRNL-727616; PRBMDO
Journal Information:
Physical Review B, Vol. 93, Issue 24; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

References (9)

New model dielectric function and exchange-correlation potential for semiconductors and insulators journal May 1982
Vanishing Electronic Energy Loss of Very Slow Light Ions in Insulators with Large Band Gaps journal September 2009
First-principles study of the threshold effect in the electronic stopping power of LiF and SiO 2 for low-velocity protons and helium ions journal February 2014
Neutralization and electronic excitation during low-energy H and He scattering from LiF journal February 1998
Electronic Stopping Power in LiF from First Principles journal December 2007
SRIM – The stopping and range of ions in matter (2010)
  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091
journal June 2010
Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State journal January 2016
Electronic stopping in insulators: a simple model journal June 2007
Interpretation of Ar + -Ar Collisions at 50 KeV journal April 1965

Cited By (1)

Velocity Dependent Dark Matter Interactions in Single-Electron Resolution Semiconductor Detectors with Directional Sensitivity text January 2019

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75 CONDENSED MATTER PHYSICS
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