Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Chen, Zhuoyu; Yuan, Hongtao; Xie, Yanwu; Lu, Di; Inoue, Hisashi; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

doi:10.1021/acs.nanolett.6b02348

Title: Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Journal Article · Thu Sep 08 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b02348· OSTI ID:1348871

Chen, Zhuoyu ^[1]; Yuan, Hongtao ^[2]; Xie, Yanwu ^[2]; Lu, Di ^[1]; Inoue, Hisashi ^[1]; Hikita, Yasuyuki ^[3]; Bell, Christopher ^[3]; Hwang, Harold Y. ^[2]

Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO₃/SrTiO₃ heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO₃ enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO₃/SrTiO₃ interface.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; N00014-12-1-0976

OSTI ID:: 1348871

Journal Information:: Nano Letters, Vol. 16, Issue 10; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 37 works

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Title: Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

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