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Title: Disorder enabled band structure engineering of a topological insulator surface

Journal Article · · Nature Communications
DOI:https://doi.org/10.1038/ncomms14081· OSTI ID:1347555
 [1];  [1];  [2];  [1];  [3];  [4];  [5];  [6]
  1. New York Univ., New York, NY (United States)
  2. New York Univ., New York, NY (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Stanford Univ., Stanford, CA (United States)
  4. Stanford Univ., Stanford, CA (United States)
  5. Purdue Univ., West Lafayette, IN (United States)
  6. New York Univ., New York, NY (United States); NYU-ECNU Institute of Physics at NYU Shanghai, Shanghai (China)

© The Author(s) 2017. Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi 2 X 3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
OSTI ID:
1347555
Alternate ID(s):
OSTI ID: 1411653
Journal Information:
Nature Communications, Vol. 8; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 35 works
Citation information provided by
Web of Science

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Cited By (9)

Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator journal January 2020
Enhanced coherence and decoupled surface states in topological insulators through structural disorder journal August 2018
Electrostatic formation of the Majorana quasiparticles in the quantum dot-nanoring structure journal March 2019
Gap-like feature observed in the non-magnetic topological insulators journal January 2020
Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators journal March 2019
Systematics of electronic and magnetic properties in the transition metal doped $Sb_{2}Te_{3}$ quantum anomalous Hall platform text January 2018
Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator text January 2019
Signatures of Topological Superconductivity in Bulk-Insulating Topological Insulator BiSbTe1.25Se1.75 in Proximity with Superconducting NbSe2 journal November 2018
Electrostatical formation of the Majorana quasiparticles in the quantum dot--nanoring structure text January 2018