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Title: Tuneable photonic device including an array of metamaterial resonators

Abstract

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346953
Patent Number(s):
9,594,266
Application Number:
14/183,261
Assignee:
Sandia Corporation
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Feb 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Citation Formats

Brener, Igal, Wanke, Michael, and Benz, Alexander. Tuneable photonic device including an array of metamaterial resonators. United States: N. p., 2017. Web.
Brener, Igal, Wanke, Michael, & Benz, Alexander. Tuneable photonic device including an array of metamaterial resonators. United States.
Brener, Igal, Wanke, Michael, and Benz, Alexander. 2017. "Tuneable photonic device including an array of metamaterial resonators". United States. https://www.osti.gov/servlets/purl/1346953.
@article{osti_1346953,
title = {Tuneable photonic device including an array of metamaterial resonators},
author = {Brener, Igal and Wanke, Michael and Benz, Alexander},
abstractNote = {A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.},
doi = {},
url = {https://www.osti.gov/biblio/1346953}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EDT 2017},
month = {Tue Mar 14 00:00:00 EDT 2017}
}

Works referenced in this record:

Controlling resonant cells of a composite material
patent, September 2006


Active terahertz metamaterial devices
patent, November 2010


Mid-infrared tunable metamaterials
patent, April 2015


Composite material with proximal gain medium
patent-application, October 2008


Active Terahertz Metamaterial Devices
patent-application, October 2009


Strong coupling in the sub-wavelength limit using metamaterial nanocavities
journal, November 2013


A spatial light modulator for terahertz beams
journal, May 2009


Active terahertz metamaterial devices
journal, November 2006


A metamaterial solid-state terahertz phase modulator
journal, February 2009


External modulators for TeraHertz Quantum Cascade Lasers based on electrically-driven active metamaterials
journal, August 2010