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Title: The role of Sb in solar cell material Cu2ZnSnS4

Journal Article · · Journal of Materials Chemistry. A
DOI:https://doi.org/10.1039/C7TA01090G· OSTI ID:1346866
ORCiD logo [1];  [2];  [2];  [3]
  1. Chinese Academy of Sciences, Hefei (China)
  2. Chinese Academy of Sciences, Hefei (China); Univ. of Science and Technology of China, Hefei (China)
  3. National Energy Technology Lab. (NETL), Pittsburgh, PA (United States)

In this paper, based on first-principles calculations we report a possible mechanism of the efficiency improvement of the Sb-doped Cu2ZnSnS4 (CZTS) solar cells from the Sb-related defect point of view. Different from Sb in CuInSe2 which substituted the Cu atomic site and acted as group-13 elements on the Cu-poor growth condition, we find out that Sb prefers to substitute Sn atomic site and acts as group-14 elements on the Cu-poor growth condition in CZTS. At low Sb concentration, SbSn produces a deep defect level which is detrimental for the solar cell application. At high Sb concentration, Sb 5s states form an isolated half-filled intermediate band at 0.5 eV above the valence band maximum which will increase the photocurrent as well as the solar cell efficiency.

Research Organization:
National Energy Technology Lab. (NETL), Pittsburgh, PA, (United States)
Sponsoring Organization:
USDOE Office of Fossil Energy (FE)
OSTI ID:
1346866
Report Number(s):
NETL-PUB-21032; JMCAET
Journal Information:
Journal of Materials Chemistry. A, Vol. 5, Issue 14; ISSN 2050-7488
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 29 works
Citation information provided by
Web of Science

References (38)

Properties of Cu(In,Ga)Se 2 solar cells with new record efficiencies up to 21.7% : Properties of Cu(In,Ga)Se journal December 2014
Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency journal November 2013
Optimization of CIGS-Based PV Device through Antimony Doping journal January 2010
First-principles calculations for defects and impurities: Applications to III-nitrides journal April 2004
Projector augmented-wave method journal December 1994
Effects of Na on the electrical and structural properties of CuInSe2 journal May 1999
Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method journal September 2003
Hybrid functionals based on a screened Coulomb potential journal May 2003
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Tuning the Band Gap of Cu 2 ZnSn(S,Se) 4 Thin Films via Lithium Alloying journal February 2016
Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering journal January 2013
Photovoltaic materials: Present efficiencies and future challenges journal April 2016
n -type doping of CuIn Se 2 and CuGa Se 2 journal July 2005
Antimony assisted low-temperature processing of CuIn1−xGaxSe2−ySy solar cells journal November 2010
Redirecting focus in CuInSe 2 research towards selenium-related defects journal October 2012
Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering process journal January 2003
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion journal October 1991
Defect properties of Sb- and Bi-doped CuInSe2: The effect of the deep lone-pair s states journal December 2014
Effects of Bi Incorporation on Cu(In 1- x ,Ga x )Se 2 Thin Films and Solar Cells journal October 2012
Synthesis of Cu 2 ZnSnS 4 Nanocrystal Ink and Its Use for Solar Cells journal August 2009
Incorporation of Li dopant into Cu 2 ZnSnSe 4 photovoltaic absorber: hybrid-functional calculations journal November 2015
Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells journal November 2013
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs journal December 2008
Intermediate bands versus levels in non-radiative recombination journal June 2006
Density functional theory calculations of defect energies using supercells journal November 2009
Towards sustainable materials for solar energy conversion: Preparation and photoelectrochemical characterization of Cu2ZnSnS4 journal April 2008
Evaluation of the efficiency potential of intermediate band solar cells based on thin-film chalcopyrite materials journal April 2008
Finite-size supercell correction schemes for charged defect calculations journal July 2012
Surfactant modified growth of CuInSe2 thin films journal February 1996
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells journal March 1961
The effects of dopant impurities on Cu2ZnSnS4 system Raman properties journal November 2014
Effects of Sodium on Polycrystalline Cu(In,Ga)Se2 and Its Solar Cell Performance journal January 1998
Structural, electrical and optical properties of Bi-doped CuInS2 thin films grown by vacuum evaporation method journal September 2006
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 journal June 2010
Cu 2 ZnSnS 4 Thin Films Generated from a Single Solution Based Precursor: The Effect of Na and Sb Doping journal July 2016
Deep electron traps and origin of p -type conductivity in the earth-abundant solar-cell material Cu 2 ZnSnS 4 journal April 2013
Intrinsic point defects in CuInSe 2 and CuGaSe 2 as seen via screened-exchange hybrid density functional theory journal June 2013
The instability of S vacancies in Cu 2 ZnSnS 4 journal January 2016

Cited By (7)

Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu 2 ZnSnS 4 Thin‐Film Solar Cells journal September 2019
Screening of suitable cationic dopants for solar absorber material CZTS/Se: A first principles study journal November 2019
Intermediate band solar cell materials through the doping of group-VA elements (N, P, As and Sb) in Cu 2 ZnSiSe 4 journal January 2019
Impact of various dopant elements on the properties of kesterite compounds for solar cell applications: a status review journal January 2019
Performance enhancement of Cu 2 ZnSn(S,Se)4 solar cell by inserting Sb and Sb 2 Se 3 doping layer at the bottom of CZTS precursor journal December 2019
Doping and alloying of kesterites journal August 2019
Investigation of single phase C u 2 ZnS n x S b 1 x S 4 compounds processed by mechanochemical synthesis journal July 2018

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