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Title: Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary

Abstract

Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.

Authors:
 [1];  [2];  [2];  [3];  [2];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Pennsylvania State Univ., University Park, PA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1346412
Report Number(s):
SAND-2017-2113J
Journal ID: ISSN 0003-6951; 651146; TRN: US1700950
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, and Maria, Jon -Paul. Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary. United States: N. p., 2017. Web. doi:10.1063/1.4973756.
Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, & Maria, Jon -Paul. Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary. United States. https://doi.org/10.1063/1.4973756
Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, and Maria, Jon -Paul. 2017. "Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary". United States. https://doi.org/10.1063/1.4973756. https://www.osti.gov/servlets/purl/1346412.
@article{osti_1346412,
title = {Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary},
author = {Kang, Xiaoyu and Shetty, Smitha and Garten, Lauren and Ihlefeld, Jon F. and Trolier-McKinstry, Susan and Maria, Jon -Paul},
abstractNote = {Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.},
doi = {10.1063/1.4973756},
url = {https://www.osti.gov/biblio/1346412}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 110,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2017},
month = {Mon Jan 23 00:00:00 EST 2017}
}

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Works referenced in this record:

Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors
journal, April 2009


Increased electromechanical coupling in w−ScxAl1−xN
journal, September 2010


Electrode size dependence of piezoelectric response of lead zirconate titanate thin films measured by double beam laser interferometry
journal, September 2013


a-plane MgxZn1−xO films deposited on r-sapphire and its surface acoustic wave characteristics
journal, July 2007


Improvement in the crystallinity of ZnO thin films by introduction of a buffer layer
journal, May 2002


Preparation of Zn1−xMgxO films by radio frequency magnetron sputtering
journal, September 2000


Infrared optical properties of MgxZn1−xO thin films (0⩽x⩽1): Long-wavelength optical phonons and dielectric constants
journal, June 2006


A sensitive double beam laser interferometer for studying high‐frequency piezoelectric and electrostrictive strains
journal, August 1989


Piezoelectric Al 1−x Sc x N thin films: A semiconductor compatible solution for mechanical energy harvesting and sensors
journal, April 2013


Origin of the Anomalous Piezoelectric Response in Wurtzite Sc x Al 1 x N Alloys
journal, April 2010


Characteristics of Mg/sub x/Zn/sub 1-x/O thin film bulk acoustic wave devices
journal, October 2003


Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
journal, December 2008


Determination of crystallographic polarity of ZnO layers
journal, October 2005


Crystalline coherence length effects on the thermal conductivity of MgO thin films
journal, August 2016


Bandgap in Al 1− x Sc x N
journal, March 2013


Chemically Homogeneous Complex Oxide Thin Films Via Improved Substrate Metallization
journal, March 2012


Reactive magnetron sputtering of ZnO
journal, July 1981


Studies on Mg/sub x/Zn/sub 1-x/O thin film resonator for mass sensor application
conference, January 2005


Wafer mapping of the transverse piezoelectric coefficient, e31,f, using the wafer flexure technique with sputter deposited Pt strain gauges
journal, January 2012


Thin Film Piezoelectrics for MEMS
journal, January 2004


Mg/sub x/Zn/sub 1-x/O: a new piezoelectric material
journal, May 2003


Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications
journal, July 2011


Acoustic investigation of the elastic properties of ZnO films
journal, December 1987


MgxZn1−xO as a II–VI widegap semiconductor alloy
journal, May 1998


Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite Mg x Zn 1-x O Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors
journal, April 2003


Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN
journal, February 2001


A morphotropic phase boundary system based on polarization rotation and polarization extension
journal, August 2010


Works referencing / citing this record:

Enhanced piezoelectric response of AlN via CrN alloying
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