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Title: Final Technical Report

Technical Report ·
DOI:https://doi.org/10.2172/1346183· OSTI ID:1346183
 [1]
  1. West Virginia Univ., Morgantown, WV (United States)

Our BES supported program integrates molecular beam epitaxy growth with in situ atomic scale imaging using scanning tunneling microscopy/spectroscopy and atomic force microscopy. Aided by density functional theory calculations, we explore enhanced functionalities emerging from the interplay of strain, proximity, and spin-orbit interactions in heterostructures of wide band gap semiconductors, graphene, and Dirac materials, focusing on three thrusts: 1) doping wide bandgap semiconductors and graphene; 2) graphene nanoribbons and graphene-semiconductor heterostructures; and 3) Dirac materials. Our findings and discoveries have led to the publication of one book chapter and twenty-three refereed journal articles, including several in high impact journals such as Nature Communications, Physical Review Letters, and Nano Letters. Highlights of each thrust are provided in the report.

Research Organization:
University of Wisconsin, Milwaukee
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
FG02-05ER46228
OSTI ID:
1346183
Report Number(s):
DOE-UWM-ER46228
Country of Publication:
United States
Language:
English

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