Impact of gate geometry on ionic liquid gated ionotronic systems

Wong, Anthony T.; Noh, Joo Hyon; Pudasaini, Pushpa Raj; Wolf, Ben; Balke, Nina; Herklotz, Andreas; Sharma, Yogesh; Haglund, Amanda V.; Dai, Sheng; Mandrus, David; Rack, Philip D.; Ward, Thomas Z.

doi:10.1063/1.4974485

Title: Impact of gate geometry on ionic liquid gated ionotronic systems

Journal Article · Mon Jan 23 00:00:00 EST 2017 · APL Materials

DOI:https://doi.org/10.1063/1.4974485· OSTI ID:1340475

Wong, Anthony T. ^[1]; Noh, Joo Hyon ^[2]; Pudasaini, Pushpa Raj ^[2];

^[2]; Balke, Nina ^[3]; Herklotz, Andreas ^[4]; Sharma, Yogesh ^[4];

^[5];

^[6]; Mandrus, David ^[1]; Rack, Philip D. ^[2]; Ward, Thomas Z. ^[4]

Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Science Division

Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard “side gate” 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. Finally, these findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF); Univ. of Tennessee (United States). Joint Directed Research and Development (JDRD) Program; Gordon and Betty Moore Foundation (United States)

Grant/Contract Number:: AC05-00OR22725; SC0002136; 1544686; GBMF4416

OSTI ID:: 1340475

Journal Information:: APL Materials, Vol. 5, Issue 4; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Ionic Gating of Ultrathin and Leaky Ferroelectrics Sharma, Yogesh; Wong, Anthony T.; Herklotz, Andreas Advanced Materials Interfaces, Vol. 6, Issue 5 https://doi.org/10.1002/admi.201801723	journal	January 2019
Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol Journal of Micromechanics and Microengineering, Vol. 28, Issue 11 https://doi.org/10.1088/1361-6439/aae39e	journal	October 2018
Programmable Electrofluidics for Ionic Liquid Based Neuromorphic Platform Boldman, Walker L.; Zhang, Cheng; Ward, Thomas Z. Micromachines, Vol. 10, Issue 7 https://doi.org/10.3390/mi10070478	journal	July 2019

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