Structural and electrical properties of In-implanted Ge

Journal Article · Thu Oct 22 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4934200· OSTI ID:1340340

Feng, R. ^[1]; Kremer, F.  ^[1]; Sprouster, D. J. ^[2]; Mirzaei, S. ^[1]; Decoster, S. ^[3]; Glover, C. J. ^[4]; Medling, S. A. ^[1]; Russo, S. P. ^[5]; Ridgway, M. C. ^[1]

---

1. Australian National Univ., Canberra, ACT (Australia)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)
3. KU Leuven, Leuven (Belgium)
4. Australian Synchrotron, Clayton, VIC (Australia)
5. RMIT Univ., Melbourne (Australia)

Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: BNL Program Development
• Grant/Contract Number: SC00112704
• OSTI ID: 1340340
• Report Number(s): BNL-111923-2016-JA; R&D Project: 20685
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 16; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE