Landau level splitting in nitrogen-seeded epitaxial graphene
We present a new form of semiconducting graphene grown on C-face silicon carbide, SiC(0001), seeded with a sub-monolayer of nitrogen. This graphene exhibits a gap of 0.3-0.7 eV from the Fermi level to the valence band dependent on lm thickness as measured via angle resolved photo-emission spectroscopy (ARPES). Scanning tunneling microscopy (STM) images imply that the bandgap may be the result of strain-induced confinement. STM indicates that much of the graphene consists of wide at hexagonal plateaus, 8-20 nm2 on average, surrounded by both smooth and disordered folds of length scales from 0.5-2 nm tall, 1-4 nm thick, and 1-20 nm long. The remainder of the surface is covered in smooth or disordered ripples and folds intermixed. Scanning tunneling spectroscopy (STS) measurements on all features show peaks suggestive of Landau levels, and have been analyzed to give pseudo-magnetic field magnitudes. The magnetic lengths associated with these fields are less than the average plateau diameter but comparable to typical fold widths. We consider a growth process whereby the graphene grows pinned to the substrate by the interface nitrogen. The graphene experiences compressive strain as a result of both this pinning as well as competing thermal expansion forces between the substrate and lm. As a result, graphene on nitrogen-seeded SiC has a more concentrated network of strained ripples and folds than seen on C-face SiC graphene without nitrogen.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357; SC0012704
- OSTI ID:
- 1340011
- Alternate ID(s):
- OSTI ID: 1334840
- Journal Information:
- Carbon, Vol. 103, Issue C; ISSN 0008-6223
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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