Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States); Indian Institute of Technology Ropar (India)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308; AC36-99GO10337
- OSTI ID:
- 1339251
- Report Number(s):
- NREL/JA-5K00-66557; applab
- Journal Information:
- MRS Communications, Vol. 6, Issue 04; ISSN 2159-6859
- Publisher:
- Materials Research Society - Cambridge University PressCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 10 works
Citation information provided by
Web of Science
Web of Science
Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors
|
journal | August 2017 |
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