Directional interlayer spin-valley transfer in two-dimensional heterostructures

Schaibley, John R.; Rivera, Pasqual; Yu, Hongyi; Seyler, Kyle L.; Yan, Jiaqiang; Mandrus, David G.; Taniguchi, Takashi; Watanabe, Kenji; Yao, Wang; Xu, Xiaodong

doi:10.1038/ncomms13747

Title: Directional interlayer spin-valley transfer in two-dimensional heterostructures

Journal Article · Wed Dec 14 00:00:00 EST 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms13747· OSTI ID:1338562

Schaibley, John R. ^[1];

^[1]; Yu, Hongyi ^[2]; Seyler, Kyle L. ^[1]; Yan, Jiaqiang ^[3]; Mandrus, David G. ^[4]; Taniguchi, Takashi ^[5];

^[5];

^[2];

^[6]

Univ. of Washington, Seattle, WA (United States). Dept. of Physics
Univ. of Hong Kong (China). Dept. of Physics. Center of Theoretical and Computational Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering. Dept. of Physics and Astronomy
National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
Univ. of Washington, Seattle, WA (United States). Dept. of Physics. Dept. of Materials Science and Engineering

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. In this paper, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe₂–WSe₂ heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Finally, our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Washington, Seattle, WA (United States); Univ. of Hong Kong (China)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); State of Washington (United States). Clean Energy Inst.; Croucher Foundation (China); RGC of Hong Kong (China)

Contributing Organization:: Univ. of Tennessee, Knoxville, TN (United States); National Inst. for Materials Science (NIMS), Tsukuba (Japan)

Grant/Contract Number:: SC0008145; SC0012509; HKU17305914P

OSTI ID:: 1338562

Journal Information:: Nature Communications, Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 93 works

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