skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Disorder-driven topological phase transition in B i 2 S e 3 films

Journal Article · · Physical Review B
 [1];  [1];  [2];  [1];  [1];  [3];  [3];  [4];  [5];  [6];  [1];  [1];  [7];  [1];  [8];  [4];  [9];  [1];  [1]
  1. Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics & Astronomy
  2. Rutgers Univ., Piscataway, NJ (United States). Dept. of Materials Science and Engineering
  3. Univ. of Colorado, Boulder, CO (United States). Dept. of Physics
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics & Materials Science
  5. Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter, Dept. of Physics and Astronomy
  6. Rutgers Univ., Piscataway, NJ (United States). Dept. of Chemistry
  7. Hankuk Univ. of Foreign Studies, Yongin-shi (Korea). Dept. of Physics
  8. Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter, Dept. of Physics and Astronomy
  9. Univ. of Colorado, Boulder, CO (United States)

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi2Se3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that there is a change in material’s topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012704; FG0203ER46066; AC02-05CH11231; W911NF-15-1-0560; DMR-1506618; DMREF-1233349; DMR-1126468; GBMF4418; DMR-1308142; DMR-1106070; GBMF2628; DESC0012704
OSTI ID:
1336221
Alternate ID(s):
OSTI ID: 1328573
Report Number(s):
BNL-113250-2016-JA; PRBMDO; R&D Project: MA015MACA; KC0201010
Journal Information:
Physical Review B, Vol. 94, Issue 16; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

References (32)

Topological insulators and superconductors journal October 2011
Topological insulator in the presence of spatially correlated disorder journal July 2013
Manifestation of Topological Protection in Transport Properties of Epitaxial Bi 2 Se 3 Thin Films journal August 2012
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface journal October 2011
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Bi 2 Se 3 Thin Films journal July 2014
High-pressure phase transitions, amorphization, and crystallization behaviors in Bi 2 Se 3 journal February 2013
Critical Density in Percolation Processes journal November 1970
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3 journal June 2013
Absence of Diffusion in Certain Random Lattices journal March 1958
Transferring MBE-Grown Topological Insulator Films to Arbitrary Substrates and Metal–Insulator Transition via Dirac Gap journal February 2014
Topological Delocalization of Two-Dimensional Massless Dirac Fermions journal October 2007
Colloquium: Topological insulators journal November 2010
Topological-Metal to Band-Insulator Transition in ( Bi 1 x In x ) 2 Se 3 Thin Films journal October 2012
Effect of strong disorder in a three-dimensional topological insulator: Phase diagram and maps of the Z 2 invariant journal May 2012
Topological Anderson Insulator journal April 2009
Topological surface states protected from backscattering by chiral spin texture journal August 2009
Disordered electronic systems journal April 1985
Thickness-Independent Transport Channels in Topological Insulator Bi 2 Se 3 Thin Films journal September 2012
Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target journal September 2011
Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator journal March 2011
A topological insulator surface under strong Coulomb, magnetic and disorder perturbations journal December 2010
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit journal June 2010
Photoemission (XPS and UPS) study of amorphous Bi2Se3 film journal August 1984
Doping a Mott insulator: Physics of high-temperature superconductivity journal January 2006
Observation of electron–hole puddles in graphene using a scanning single-electron transistor journal November 2007
Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator journal August 2011
A new topological insulator built from quasi one-dimensional atomic ribbons: A new topological insulator built from quasi one-dimensional atomic ribbons journal December 2014
Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators journal May 2015
Hedgehog spin texture and Berry’s phase tuning in a magnetic topological insulator journal June 2012
Topological Anderson Insulator in Three Dimensions journal November 2010
Topological phase transitions in (Bi 1 x In x ) 2 Se 3 and (Bi 1 x Sb x ) 2 Se 3 journal December 2013
Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions journal March 1979

Cited By (1)