Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors
Abstract
Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >109, and high drive currents exceeding 320 μA μm–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 102 cm2 V–1 s–1 at room temperature, which increases to >2 × 103 cm2 V–1 s–1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.
- Authors:
-
- Wayne State Univ., Detroit, MI (United States)
- The Univ. of Tennessee, Knoxville, TN (United States)
- The Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Michigan State Univ., East Lansing, MI (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1334435
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 3; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; WSe2; MoSe2; field-effect transistor; two-dimensional; ohmic contact
Citation Formats
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States: N. p., 2016.
Web. doi:10.1021/acs.nanolett.5b05066.
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, & Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States. https://doi.org/10.1021/acs.nanolett.5b05066
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. 2016.
"Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors". United States. https://doi.org/10.1021/acs.nanolett.5b05066. https://www.osti.gov/servlets/purl/1334435.
@article{osti_1334435,
title = {Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors},
author = {Chuang, Hsun -Jen and Chamlagain, Bhim and Koehler, Michael and Perera, Meeghage Madusanka and Yan, Jiaqiang and Mandrus, David and Tomanek, David and Zhou, Zhixian},
abstractNote = {Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >109, and high drive currents exceeding 320 μA μm–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 102 cm2 V–1 s–1 at room temperature, which increases to >2 × 103 cm2 V–1 s–1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.},
doi = {10.1021/acs.nanolett.5b05066},
url = {https://www.osti.gov/biblio/1334435},
journal = {Nano Letters},
issn = {1530-6984},
number = 3,
volume = 16,
place = {United States},
year = {Thu Feb 04 00:00:00 EST 2016},
month = {Thu Feb 04 00:00:00 EST 2016}
}
Web of Science
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- Lyu, Juan; Pei, Jing; Guo, Yuzheng
- Advanced Materials, Vol. 32, Issue 2
Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter
journal, February 2019
- Chiu, Ming‐Hui; Tang, Hao‐Ling; Tseng, Chien‐Chih
- Advanced Materials, Vol. 31, Issue 18
Doping engineering and functionalization of two-dimensional metal chalcogenides
journal, January 2019
- Luo, Peng; Zhuge, Fuwei; Zhang, Qingfu
- Nanoscale Horizons, Vol. 4, Issue 1
Contact engineering for 2D materials and devices
journal, January 2018
- Schulman, Daniel S.; Arnold, Andrew J.; Das, Saptarshi
- Chemical Society Reviews, Vol. 47, Issue 9
Electrical devices from top-down structured platinum diselenide films
journal, February 2018
- Yim, Chanyoung; Passi, Vikram; Lemme, Max C.
- npj 2D Materials and Applications, Vol. 2, Issue 1
Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
text, January 2016
- Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai
- arXiv
Effects of Graphene/BN Encapsulation, Surface Functionalization and Molecular Adsorption on the Electronic Properties of Layered InSe: A First-Principles Study
text, January 2018
- Kistanov, Andrey A.; Cai, Yongqing.; Zhou, Kun
- arXiv
Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
text, January 2019
- Walmsley, Thayer S.; Chamlagain, Bhim; Wang, Tianjiao
- arXiv
Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
journal, March 2018
- Ciarrocchi, Alberto; Avsar, Ahmet; Ovchinnikov, Dmitry
- Nature Communications, Vol. 9, Issue 1
Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
text, January 2016
- Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai
- arXiv
MERAM: Non-Volatile Cache Memory Based on Magneto-Electric FETs
preprint, January 2020
- Angizi, Shaahin; Khoshavi, Navid; Marshall, Andrew
- arXiv