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Title: Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors

Abstract

Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >109, and high drive currents exceeding 320 μA μm–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 102 cm2 V–1 s–1 at room temperature, which increases to >2 × 103 cm2 V–1 s–1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.

Authors:
 [1];  [1];  [2];  [1];  [3];  [3];  [4];  [1]
  1. Wayne State Univ., Detroit, MI (United States)
  2. The Univ. of Tennessee, Knoxville, TN (United States)
  3. The Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1334435
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 3; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; WSe2; MoSe2; field-effect transistor; two-dimensional; ohmic contact

Citation Formats

Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.5b05066.
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, & Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States. https://doi.org/10.1021/acs.nanolett.5b05066
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. 2016. "Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors". United States. https://doi.org/10.1021/acs.nanolett.5b05066. https://www.osti.gov/servlets/purl/1334435.
@article{osti_1334435,
title = {Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors},
author = {Chuang, Hsun -Jen and Chamlagain, Bhim and Koehler, Michael and Perera, Meeghage Madusanka and Yan, Jiaqiang and Mandrus, David and Tomanek, David and Zhou, Zhixian},
abstractNote = {Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >109, and high drive currents exceeding 320 μA μm–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 102 cm2 V–1 s–1 at room temperature, which increases to >2 × 103 cm2 V–1 s–1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.},
doi = {10.1021/acs.nanolett.5b05066},
url = {https://www.osti.gov/biblio/1334435}, journal = {Nano Letters},
issn = {1530-6984},
number = 3,
volume = 16,
place = {United States},
year = {Thu Feb 04 00:00:00 EST 2016},
month = {Thu Feb 04 00:00:00 EST 2016}
}

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Cited by: 285 works
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