Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G.; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

doi:10.1002/adma.201601104

Title: Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Journal Article · Tue Sep 20 00:00:00 EDT 2016 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201601104· OSTI ID:1334421

Gao, Jian ^[1]; Kim, Young Duck ^[2]; Liang, Liangbo ^[3]; Idrobo, Juan Carlos ^[4]; Chow, Phil ^[1]; Tan, Jiawei ^[1]; Li, Baichang ^[1]; Li, Lu ^[5]; Sumpter, Bobby G. ^[4]; Lu, Toh-Ming ^[6]; Meunier, Vincent ^[6]; Hone, James ^[2]; Koratkar, Nikhil ^[7]

Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Mechanical, Aerospace and Nuclear Engineering
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics and Astronomy
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering ; Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Mechanical, Aerospace and Nuclear Engineering

Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: AC05-00OR22725; 1435783; 1510828; 1608171; DMR-1420634

OSTI ID:: 1334421

Journal Information:: Advanced Materials, Vol. 28, Issue 44; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 164 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
band structure
chemical vapor deposition
electronic properties
monolayer transition-metal dichalcogenides
transition-metal doping

Title: Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

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