High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell

Baker, Jason; Kumar, Ravhi S.; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew L.; Velisavljevic, Nenad

doi:10.1107/S1600577516014521

Title: High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Journal of Synchrotron Radiation (Online)

DOI:https://doi.org/10.1107/S1600577516014521· OSTI ID:1332352

Baker, Jason ^[1]; Kumar, Ravhi S. ^[1]; Park, Changyong ^[2]; Kenney-Benson, Curtis ^[2]; Cornelius, Andrew L. ^[1]; Velisavljevic, Nenad ^[3]

Univ. of Nevada, Las Vegas, NV (United States)
Carnegie Inst. of Washington, Argonne, IL (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

A new sample cell assembly design for the Paris-Edinburgh type large-volume press for simultaneous measurements of X-ray diffraction, electrical resistance, Seebeck coefficient and relative changes in the thermal conductance at high pressures has been developed. The feasibility of performing in situ measurements of the Seebeck coefficient and thermal measurements is demonstrated by observing well known solid–solid phase transitions of bismuth (Bi) up to 3 GPa and 450 K. A reversible polarity flip has been observed in the Seebeck coefficient across the Bi-I to Bi-II phase boundary. Also, successful Seebeck coefficient measurements have been performed for the classical high-temperature thermoelectric material PbTe under high pressure and temperature conditions. In addition, the relative change in the thermal conductivity was measured and a relative change in ZT, the dimensionless figure of merit, is described. Furthermore, this new capability enables pressure-induced structural changes to be directly correlated to electrical and thermal properties.

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Research Organization:: Univ. of Nevada, Las Vegas, NV (United States); Carnegie Inst. of Science, Washington, DC (United States); Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP)

Grant/Contract Number:: NA0001982; NA0001974; NA0002006; FG02-99ER45775; AC02-06CH11357; AC52-06NA25396

OSTI ID:: 1332352

Journal Information:: Journal of Synchrotron Radiation (Online), Vol. 23, Issue 6; ISSN 1600-5775

Publisher:: International Union of CrystallographyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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