Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Liu, Fucai; You, Lu; Seyler, Kyle L.; Li, Xiaobao; Yu, Peng; Lin, Junhao; Wang, Xuewen; Zhou, Jiadong; Wang, Hong; He, Haiyong; Pantelides, Sokrates T.; Zhou, Wu; Sharma, Pradeep; Xu, Xiaodong; Ajayan, Pulickel M.; Wang, Junling; Liu, Zheng

doi:10.1038/ncomms12357

Title: Room-temperature ferroelectricity in CuInP₂S₆ ultrathin flakes

Journal Article · Thu Aug 11 00:00:00 EDT 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms12357· OSTI ID:1331101

Liu, Fucai ^[1];

^[1]; Seyler, Kyle L. ^[2]; Li, Xiaobao ^[3]; Yu, Peng ^[1]; Lin, Junhao ^[4]; Wang, Xuewen ^[1]; Zhou, Jiadong ^[1]; Wang, Hong ^[1]; He, Haiyong ^[1];

^[5];

^[6]; Sharma, Pradeep ^[7];

^[2]; Ajayan, Pulickel M. ^[8];

^[1]; Liu, Zheng ^[9]

Nanyang Technological Univ. (Singapore)
Univ. of Washington, Seattle, WA (United States)
Hefei Univ. of Technology, Hefei (China)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Houston, Houston, TX (United States)
Rice Univ., Houston, TX (United States)
Nanyang Technological Univ. (Singapore); CINTRA CNRS/NTU/THALES (Singapore)

In this study, two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP₂S₆ (CIPS) with a transition temperature of ~320 K. Switchable polarization is observed in thin CIPS of ~4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ~100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1331101

Journal Information:: Nature Communications, Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 466 works

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