Ultrananocrystalline diamond contacts for electronic devices
Patent
·
OSTI ID:1330709
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886; SC0012704; AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY) ; The Research Foundation for the State University of New York (Albany, NY)
- Patent Number(s):
- 9,484,474
- Application Number:
- 14/790,995
- OSTI ID:
- 1330709
- Resource Relation:
- Patent File Date: 2015 Jul 02
- Country of Publication:
- United States
- Language:
- English
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