Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Tsinghua Univ., Beijing (China)
- Univ. of Texas at San Antonio, San Antonio, TX (United States)
- Texas A & M Univ., College Station, TX (United States)
Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1329907
- Alternate ID(s):
- OSTI ID: 1307786
- Report Number(s):
- LA-UR-16-24476; APPLAB
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 8; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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