High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10–12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1326061
- Report Number(s):
- SAND-2016-8357J; OPEXFF; 647399
- Journal Information:
- Optics Express, Vol. 24, Issue 17; ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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