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Title: Increased Indium Incorporation and Efficiency in InGaN Quantum Wells Emitting at 530-590 nm with AlGaN Interlayers.

Conference ·
OSTI ID:1296535

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1296535
Report Number(s):
SAND2015-6760C; 598879
Resource Relation:
Conference: Proposed for presentation at the 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) held August 2-7, 2015 in Big Sky, MT.
Country of Publication:
United States
Language:
English

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