Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

Debelle, Aurelien; Boulle, Alexandre; Chartier, Alain; Gao, Fei; Weber, William J

doi:10.1103/PhysRevB.90.174112

Title: Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

Journal Article · Tue Nov 25 00:00:00 EST 2014 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.90.174112· OSTI ID:1286809

Debelle, Aurelien ^[1]; Boulle, Alexandre ^[2]; Chartier, Alain ^[3]; Gao, Fei ^[4]; Weber, William J ^[5]

Univ. of Paris-Sud, Orsay (France). Centre for Nuclear Science and Matter Sciences (CSNSM)
Centre National de la Recherche Scientifique (CNRS), Limoges (France). Science des Proc'ed'es C'eramiques et Traitements de Surface (SPCTS)
Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA-DEN-DPC-SCCME), Gif-sur-Yvette (France)
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AC02-05CH11231; DEAC02-05CH11231

OSTI ID:: 1286809

Alternate ID(s):: OSTI ID: 1180042

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 90, Issue 17; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 34 works

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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B. Applied Physics A, Vol. 125, Issue 1 https://doi.org/10.1007/s00339-018-2325-7	journal	December 2018
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