Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Browne, David A.; Wu, Yuh -Renn; Speck, James S.; Mazumder, Baishakhi

doi:10.1063/1.4919750

Title: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH₃ molecular beam epitaxy

Journal Article · Fri May 08 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919750· OSTI ID:1279421

Browne, David A. ^[1]; Wu, Yuh -Renn ^[2]; Speck, James S. ^[1]; Mazumder, Baishakhi ^[3]

Univ. of California, Santa Barbara, CA (United States)
National Taiwan Univ., Taipei (Taiwan)
Univ. of California, Santa Barbara, CA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Unipolar-light emitting diode like structures were grown by NH₃ molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In_0.14Ga_0.86N and In_0.19Ga_0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. Furthermore, a drift diffusion Schrodinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1279421

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 18; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 37 works

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Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels Li, Chengcheng; Chen, Zhizhong; Jiao, Fei RSC Advances, Vol. 9, Issue 42 https://doi.org/10.1039/c9ra04174e	journal	January 2019
Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Laurent, Matthew A.; Gupta, Geetak; Suntrup, Donald J. Journal of Applied Physics, Vol. 119, Issue 6 https://doi.org/10.1063/1.4941531	journal	February 2016
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