Size dictated thermal conductivity of GaN

McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, Christina M.; Maria, Jon -Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

doi:10.1063/1.4962010

Title: Size dictated thermal conductivity of GaN

Journal Article · Fri Apr 01 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4962010· OSTI ID:1269902

McDonald, Anthony E. ^[1]; Fuller, Elliot James ^[2]; Talin, Albert Alec ^[2]; Rost, Christina M. ^[3]; Maria, Jon -Paul ^[3]; Gaskins, John T. ^[4]; Hopkins, Patrick E. ^[4]; Allerman, Andrew A. ^[4]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
North Carolina State Univ., Raleigh, NC (United States)
Univ. of Virginia, Charlottesville, VA (United States)

We investigated the thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3–4 μm using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (10¹⁵–10¹⁸ cm^–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. In contrast, the thermal conductivity of p-type epilayers reduces from 160 to 110 W/mK with increased doping. These trends we observe—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1269902

Alternate ID(s):: OSTI ID: 1315839; OSTI ID: 1340179

Report Number(s):: SAND-2016-3450J; SAND2016-2716J; 638268

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 9; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 69 works

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