Electrical control of second-harmonic generation in a WSe2 monolayer transistor

Seyler, Kyle L.; Schaibley, John R.; Gong, Pu; Rivera, Pasqual; Jones, Aaron M.; Wu, Sanfeng; Yan, Jiaqiang; Mandrus, David G.; Yao, Wang; Xu, Xiaodong

doi:10.1038/nnano.2015.73

Title: Electrical control of second-harmonic generation in a WSe₂ monolayer transistor

Journal Article · Mon Apr 20 00:00:00 EDT 2015 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2015.73· OSTI ID:1265564

Seyler, Kyle L. ^[1]; Schaibley, John R. ^[1]; Gong, Pu ^[2];

^[1];

^[1]; Wu, Sanfeng ^[1]; Yan, Jiaqiang ^[3]; Mandrus, David G. ^[4];

^[2];

^[5]

Univ. of Washington, Seattle, WA (United States). Dept. of Physics
Univ. of Hong Kong (China). Dept. of Physics and Center of Theoretical and Computational Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material and, so far, dynamical control of optical nonlinearities remains confined to research laboratories as a spectroscopic tool. In this paper, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe₂, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of four at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser due to the combination of the two-photon and one-photon valley selection rules, which have opposite helicity in the monolayer. Finally, our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Research Grant Council of Hong Kong (China); University Grant Council of Hong Kong (China)

Contributing Organization:: Univ. of Washington, Seattle, WA (United States); Univ. of Hong Kong (China)

Grant/Contract Number:: SC0008145; SC0012509; DMR-1150719; HKU705513P; HKU9/CRF/13G; AoE/P-04/08

OSTI ID:: 1265564

Journal Information:: Nature Nanotechnology, Vol. 10, Issue 5; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 348 works

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